2SB772T中文资料
- 大小：387.73KB
- 厂家：TD
- 描述：Dated : 16/09/2016 Rev:02 TOP DYNAMIC E B C 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Collector Base Voltage -V CBO 40 V Collector Emitter Voltage -V CEO 30 V Emitter Base Voltage -V EBO 5 V Collector Current - DC Collector Current - Pulse 1) -I C -I CP 3 7 A A Base Current - DC -I B 0.6 A Total Power Dissipation P tot 10 1 W Operating and Storage Junction Temperature Range T j , T stg - 65 to + 150 O C 1) PW = 10 ms, Duty Cycle ≤ 50 % Characteristics at T a = 25 O C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -V CE = 2 V, -I C = 20 mA at -V CE = 2 V, -I C = 1 A Current Gain Group R Q P
2SB772T供应商
更新时间:2023-01-04 02:17:39- 供应商
- 产品型号
- 服务标识
- 数量
- 厂商
- 封装/批号
- 说明
- 询价
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2SB772T
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6000
-
SOT89/2010+
-
原装正品,配单能手
-
2SB772T
-
21000
-
SOT89/24+
-
代理商，原厂原装，支持实单
-
2SB772T
-
6000
-
SOT89/2010+
-
原装，配单能手
-
2SB772T
-
6482
-
SOT89/13+
-
原装正品/假一罚十
-
2SB772T
-
100000
-
SOT89/2024+
-
原厂原装现货库存支持当天发货
-
2SB772T P160-320
-
2985
-
SOT893/2023
-
原装货源可追溯
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2SB772T-P
-
78000
-
NEW/NEW
-
一级代理保证
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2SB772T-P
-
168000
-
SOT89/23+
-
全新原装现货/实单价格支持/优势渠道
-
2SB772T-P
-
3000
-
TO126F/-
-
特价批量支持
-
2SB772T-P
-
300000
-
SOT89/23+
-
一级代理商可提供技术方案支持
-
2SB772T-P
-
158600
-
SOT89/2023+
-
代理分销，原厂原装，欢迎咨询
-
2SB772T-P
-
65200
-
SOT89/21+
-
-
-
2SB772T-P
-
8913
-
SOT89/23+
-
柒号芯城，离原厂的距离只有0.07公分
-
2SB772T-P
-
13400
-
SOT89/24+
-
原厂原装现货
-
2SB772T-P
-
138000
-
SOT89/23+
-
全新原装现货/实单价格支持/优势渠道
-
2SB772T-P
-
160000
-
FPBGA672(27x27)/21+
-
原装现货秉承原装
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